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Room-Temperature Ferromagnetism in Zn 1-x MnxO Thin Films Deposited by Pulsed Laser Deposition |
TENG Xiao-Yun 1,2;YU Wei 2;YANG Li-Hua 2;HAO Qiu-Yan 1;ZHANG Li2, XU He-Ju2;LIU Cai-Chi1;FU Guang-Sheng2 |
1School of Material Science and Engineering, Hebei University of Technology, Tianjin 3001302College of Physics Science and Technology, Hebei University, Baoding 071002 |
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Cite this article: |
TENG Xiao-Yun, YU Wei, YANG Li-Hua et al 2007 Chin. Phys. Lett. 24 1073-1075 |
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Abstract Zn1-x MnxO (x=0.01--0.1) thin films with a Curie temperature above 300K are deposited on Al2O3 (0001) substrates by pulsed laser deposition. X-ray diffraction (XRD), ultraviolet (UV)-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device (SQUID). The results indicate that Mn doping introduces the incorporation of Mn2+ ions into the ZnO host matrix and the insertion of Mn2+ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-x MnxO films.
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Keywords:
75.50.Dd
75.50.Pp
75.60.Ej
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Received: 07 December 2006
Published: 26 March 2007
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PACS: |
75.50.Dd
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(Nonmetallic ferromagnetic materials)
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75.50.Pp
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(Magnetic semiconductors)
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75.60.Ej
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(Magnetization curves, hysteresis, Barkhausen and related effects)
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