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A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes |
| MA Hong-Xia1;HAN Yan-Jun2;SHENTU Wei-Jin2;ZHANG Xian-Peng2;LUO Yi1,2 |
| 1Graduate School at Shenzhen, Tsinghua University, Shenzhen 518057
2State Key Laboratory on Integrated Optoelectronics, Department of Electronics Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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MA Hong-Xia, HAN Yan-Jun, SHENTU Wei-Jin et al 2006 Chin. Phys. Lett. 23 2299-2202 |
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Abstract We present a high-quality Ni/Ag/Pt Ohmic contact to p-type GaN. After the sample is annealed at 500°C in O2 ambient for 3min, a specific contact resistance as low as 2.6×10-5Ω.cm2 and an optical reflectivity of 82% at 460nm are obtained. The Auger electron spectroscopy analysis shows that the Pt layer can improve the surface morphology and thermal reliability of the annealed Ag-based electrode, Ag plays a key role in achieving good ohmic contact due to the outdiffusion of Ga into Ag forming Ga vacancies which increase the hole concentration, while the surface contamination of p-type GaN is reduced by Ni.
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| Keywords:
85.60.-q
85.30.Kk
81.05.Ea
07.79.Lh
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Published: 01 August 2006
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