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Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films |
| XU Chuan-Ming1;SUN Yun1;LI Feng-Yan1;ZHANG Li1;XUE Yu-Ming1;HE Qing1;LIU Hong-Tu2 |
| 1Institute of Photoelectronics, Nankai University, Tianjin 300071
2Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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XU Chuan-Ming, SUN Yun, LI Feng-Yan et al 2006 Chin. Phys. Lett. 23 1002-1004 |
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Abstract Composition dependence of quaternary CuIn1-xGaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm-1 for CuInSe2 to 185cm-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x>0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.
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| Keywords:
78.30.Fs
68.55.Nq
81.15.Kk
61.66.Fn
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Published: 01 April 2006
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| PACS: |
78.30.Fs
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(III-V and II-VI semiconductors)
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68.55.Nq
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(Composition and phase identification)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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61.66.Fn
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(Inorganic compounds)
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