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Trapping Effects in CdSiO3:In3+ Long Afterglow Phosphor |
| KUANG Jin-Yong;LIU Ying-Liang |
| Department of Chemistry, Jinan University, Guangzhou 510632 |
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| Cite this article: |
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KUANG Jin-Yong, LIU Ying-Liang 2006 Chin. Phys. Lett. 23 204-206 |
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Abstract Trapping effects in CdSiO3:In3+ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at 346 and 418K appear in the undoped CdSiO3 phosphor; whereas only one strong cadmium vacancy VCd'' defect associated with peak at 348K appears in the Cd1-xInxSiO3 phosphor due to the chemical nonequivalent substitutions of Cd2+ ions by In3+ ions. This chemical nonequivalent substitution of In3+ ions into the CdSiO3 host produced the highly dense cadmium vacancy VCd'' trap level at 348K, which resulted in the origin of the long afterglow phenomenon. The findings has enlarged the family of non-rare-earth doped long afterglow phosphors available, and offers a promising approach for searching long afterglow phosphor.
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| Keywords:
78.55.Hx
78.60.Kn
72.20.Jv
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Published: 01 January 2006
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| PACS: |
78.55.Hx
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(Other solid inorganic materials)
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78.60.Kn
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(Thermoluminescence)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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