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Quantitative Mobility Spectrum Analysis for Determination of Electron and Magneto Transport Properties of Te-Doped GaSb |
| S. Acar1;M. Kasap1;B. Y. Isik1;S. Özcelik1;N. Tugluoglu2;S. Karadeniz2 |
| 1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500, Ankara, Turkey
2Department of Materials Research, Ankara Nuclear Research and Training Center, 06100, Besevler, Ankara, Turkey |
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| Cite this article: |
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S. Acar, M. Kasap, B. Y. Isik et al 2005 Chin. Phys. Lett. 22 2363-2366 |
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Abstract Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralsk technique are carried out as functions of temperature (35--350K) and magnetic field (0--1.35T). The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters (nL, nΓ, μL, μΓ, p and μp) on both the electron and magneto transports have been discussed. The EL-EG energy separation between the L and Γ conduction band edges is also derived.
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| Keywords:
72.20.My
72.20.Fr
72.80.Ey
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Published: 01 September 2005
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| PACS: |
72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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72.80.Ey
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(III-V and II-VI semiconductors)
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