| Original Articles |
|
|
|
|
Structural and Electrical Characteristics of Pb(Zr0.53,Ti0.47)O3 Thin Films Deposited on Si (100) Substrates |
| CHEN Bin;YANG Hao;MIAO Jun;ZHAO Li;XU Bo;DONG Xiao-Li;CAO Li-Xin;QIU Xiang-Gang;ZHAO Bai-Ru |
| National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, P O Box 603, Beijing 100080 |
|
| Cite this article: |
|
CHEN Bin, YANG Hao, MIAO Jun et al 2005 Chin. Phys. Lett. 22 697-700 |
|
|
|
|
Abstract Pb(Zr0.53,Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only (110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C--V) and current versus voltage (I--V) measurements. The clockwise trace of the C--V curve shows ferroelectric polarization switching, as is expected. From the I--V curves, the Schottky emission and space-charge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.
|
| Keywords:
77.84.-s
84.37.+q
72.20.-i
|
|
|
Published: 01 March 2005
|
|
| PACS: |
77.84.-s
|
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
|
| |
84.37.+q
|
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
|
| |
72.20.-i
|
(Conductivity phenomena in semiconductors and insulators)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
