Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

Chin. Phys. Lett.

2005, Vol. 22

Issue (10): 2692-2695 DOI:

Original Articles

Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei

National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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LIANG Song, ZHU Hong-Liang, PAN Jiao-Qing et al 2005 Chin. Phys. Lett. 22 2692-2695

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Abstract Thermal annealing effect on InAs quantum dots grown on vicinal (100) GaAs substrates is studied in comparison with dots on exact (100) GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.

Keywords: 78.67.Hc 78.55.Cr 68.65.Hb

Published: 01 October 2005

PACS:	78.67.Hc	(Quantum dots)
	78.55.Cr	(III-V semiconductors)
	68.65.Hb	(Quantum dots (patterned in quantum wells))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I10/02692

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	LIANG Song
	ZHU Hong-Liang
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