| Original Articles |
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Applications of Cubic MgZnO Thin Films in Metal-Insulator-Silicon Structures |
| LIANG Jun1;WU Hui-Zhen1,2;LAO Yan-Feng1;QIU Dong-Jiang2;CHEN Nai-Bo2;XU Tian-Ning2 |
| 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Department of Physics, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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LIANG Jun, WU Hui-Zhen, LAO Yan-Feng et al 2004 Chin. Phys. Lett. 21 1135-1138 |
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Abstract Cubic Mg0.55Zn0.45O thin film alloys have been deposited on Si substrates at low growth temperature. The topography of the cross section of the epitaxial film by scanning electronic microscope demonstrates good morphology and high interfacial quality. The high (001) orientation and wide band-gap (Eg > 5.5 eV) of the cubic Mg0.55Zn0.45O thin films accord with the guidelines for metal-insulator-silicon (MIS) device applications. Using the cubic ternary thin films as insulators, MIS structures have been fabricated. The capacitance-voltage measurements show the flat band voltage shift VFB of 11.8 V and mobile ion density Dmc of 5.57 x 1010cm-2 for the MIS structure. Leakage current density as low as ～ 10-7 A/cm2 is obtained at E = 700 kV/cm by the current-voltage measurements. These unique structural and electrical properties of the fabricated MIS devices indicate that cubic MgZnO materials could become a new candidate for high-k dielectrics used in silicon integrated circuit technologies.
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| Keywords:
77.55.+f
73.40.Qv
73.61.-r
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Published: 01 June 2004
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| PACS: |
77.55.+f
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.-r
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(Electrical properties of specific thin films)
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