Chin. Phys. Lett.  2004, Vol. 21 Issue (6): 1096-1099    DOI:
Original Articles |
Crystallization Kinetics of Amorphous In44Sb20Te36 Phase-Change Optical Recording Films on a Nanosecond Scale
ZHANG Xue-Ru1;WUTTIG Mattias2
1Department of Physics, Harbin Institute of Technology, Harbin 150001 2Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany
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ZHANG Xue-Ru, WUTTIG Mattias 2004 Chin. Phys. Lett. 21 1096-1099
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Abstract We propose a simple method to investigate the crystallization kinetics of amorphous In44Sb20Te36 films on a nanosecond scale, based on local reflectivity measurements of the nanosecond laser-induced crystallization using a static tester. The pulse condition in terms of laser power and pulse width required for the onset of crystallization is established. Applying this pulse condition and Kissinger's analysis, an activation energy of 0.57 eV is estimated for the crystallization. This value deviates substantially from the activation energy determined at lower sample temperatures where crystallization proceeds in a time scale of seconds rather than nanoseconds.

Keywords: 42.70.Gi      64.70.Kb      78.66.Jg     
Published: 01 June 2004
PACS:  42.70.Gi (Light-sensitive materials)  
  64.70.Kb  
  78.66.Jg (Amorphous semiconductors; glasses)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I6/01096
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