Improved Quantum Efficiency of Organic Light Emitting Diodes with Gradiently Doped Double Emitting Zone

Chin. Phys. Lett.

2003, Vol. 20

Issue (6): 938-941 DOI:

Original Articles

Improved Quantum Efficiency of Organic Light Emitting Diodes with Gradiently Doped Double Emitting Zone

GAO Wen-Bao¹;JIANG Wen-Long²;SUN Jia-Xin¹;FENG Jing¹;HOU Jing-Ying¹;LIU Shi-Yong¹

¹National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023 ²Electronic Information and Engineering Department, Jilin Normal University, Siping 136000

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GAO Wen-Bao, JIANG Wen-Long, SUN Jia-Xin et al 2003 Chin. Phys. Lett. 20 938-941

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Abstract We investigate electroluminescent characteristics of gradiently doped organic light-emitting diodes, which were gradiently doped in both the hole and the electron-transporting layer to form a double emitting zone. The device structure was ITO/(15 nm) CuPc/(60 nm)NPB:rubrene/(30 nm)Alq₃:rubrene (20 nm)Alq₃/(0.5 nm)LiF/Al. We observed that charge carriers were well trapped by the dopant molecules and the main emitting zone was localized at the NPB:rubrene side close to the interface of NPB:rubrene/Alq₃:rubrene. The quantum efficiency (cd/A) was enhanced to 5.89 cd/A at 6 V. We attributed this improvement to the charge carriers trapping and the emitting of the double emitting zone.

Keywords: 78.60.Fi 78.20.e 78.55.Et

Published: 01 June 2003

PACS:	78.60.Fi	(Electroluminescence)
	78.20.e
	78.55.Et	(II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I6/0938

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	GAO Wen-Bao
	JIANG Wen-Long
	SUN Jia-Xin
	FENG Jing
	HOU Jing-Ying
	LIU Shi-Yong

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