| Original Articles |
|
|
|
|
Synthesis of Thick Diamond Film by Direct Current Hot-Cathode Plasma Chemical Vapor Deposition |
| JIN Zeng-Sun;JIANG Zhi-Gang;BAI Yi-Zhen;LÜ Xian-Yi |
| National Laboratory of Superhard Materials, Jilin University,
Changchun 130023 |
|
| Cite this article: |
|
JIN Zeng-Sun, JIANG Zhi-Gang, BAI Yi-Zhen et al 2002 Chin. Phys. Lett. 19 1374-1376 |
|
|
|
|
Abstract The method of direct current hot-cathode plasma chemical vapour deposition method is established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100°C to 1500°C and nonsymmetrical configuration of the poles, in which the diameter of cathode is larger than that of anode. High quality thick diamond films in diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates of 5-10μm/h. Most of the thick diamond films have thermal conductivities of 10-12W/K.cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and used as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved.
|
| Keywords:
81.15.Gh
66.60.+a
81.05.Uw
|
|
|
Published: 01 September 2002
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
