| Original Articles |
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Raman Analysis of a Crystalline SiC Sample Prepared from
Carbon-Saturated Melt of Silicon |
| MA Jian-Ping;CHEN Zhi-Ming;LU Gang;HANG Lian-Mao;FENG Xian-Feng;LEI Tian-Min |
| Department of Applied Electronics, Xi’an University of
Technology, Xi’an 710048 |
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| Cite this article: |
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MA Jian-Ping, CHEN Zhi-Ming, LU Gang et al 2001 Chin. Phys. Lett. 18 1123-1125 |
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Abstract Crystalline SiC samples were prepared in solidification of silicon melt saturated by carbon solved from the inner wall of a graphite crucible. The Crystalline structure of the samples was analysed in Raman spectroscopy and confirmed as 3C-SiC both in x-ray diffraction and x-ray photoelectron spectroscopy(XPS). The Raman spectra of the samples present a strong sharp peak located at 796.3 cm-1 with a full width at half maximum about 6 cm-1 and three weak peaks broadened around 1525.6, 1631.4 and 1719.1 cm-1, respectively. The former belongs to the transverse optical phonons of 3C-SiC, while the latter can be attributed to the second-order scattering. However, the longitudinal optical mode of 3C-SiC has not been found for our samples. An additional broadened peak at 532.2 cm-1 may imply the existence of some lattice defect in the samples, which is related to nitrogen introduced unintentionally into the lattice in the growth process and confirmed in XPS of N 1s binding energy centered at 400.9 eV.
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| Keywords:
78.30.-j
81.10.Fq
61.10.-j
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Published: 01 August 2001
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