Surface Acoustic Wave Velocity and Electromechanical Coupling
Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

Chin. Phys. Lett.

2001, Vol. 18

Issue (10): 1418-1419 DOI:

Original Articles

Surface Acoustic Wave Velocity and Electromechanical Coupling Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

CHEN Zhen¹;LU Da-Cheng¹;WANG Xiao-Hui¹;LIU Xiang-Lin¹;HAN Pei-De¹;YUAN Hai-Rong¹;WANG Du¹;WANG Zhan-Guo¹;HE Shi-Tang²;LI Hong-Lang²;YAN Li³;CHEN Xiao-Yang³

¹Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ²Institute of Acoustics, Chinese Academy of Sciences, Beijing 100080 ³Surface Acoustic Wave Corporation, Institute No.23 of China Aerospace Corporation, Beijing 100854

Cite this article:

CHEN Zhen, LU Da-Cheng, WANG Xiao-Hui et al 2001 Chin. Phys. Lett. 18 1418-1419

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Abstract High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapor phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans-ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.

Keywords: 81.05.Ea 43.35.Pt 81.15.Gh

Published: 01 October 2001

PACS:	81.05.Ea	(III-V semiconductors)
	43.35.Pt	(Surface waves in solids and liquids)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I10/01418

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	CHEN Zhen
	LU Da-Cheng
	WANG Xiao-Hui
	LIU Xiang-Lin
	HAN Pei-De
	YUAN Hai-Rong
	WANG Du
	WANG Zhan-Guo
	HE Shi-Tang
	LI Hong-Lang
	YAN Li
	CHEN Xiao-Yang

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