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Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure |
| ZHOU Yu-Gang1;SHEN Bo1;ZHANG Rong1;LI Wei-Ping1;CHEN Peng1;CHEN Zhi-Zhong1;GU Shu-Lin1;SHI Yi1;Z. C. Huang2;ZHENG You-Dou1 |
| 1Solid State Microstructures Laboratory and Department of Physics, Nanjing University, Nanjing 210093
2Raytheon ITSS, 4500 Forbes Bulivard, MD 20771, USA
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| Cite this article: |
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ZHOU Yu-Gang, SHEN Bo, ZHANG Rong et al 2000 Chin. Phys. Lett. 17 617-618 |
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Abstract AlGaN/GaN heterostructures on sapphire substrate were fabricated by using light radiation heating metalor-ganic chemical vapor deposition. Photoluminescence excitation spectra show that there are two abrupt slopes corresponding to the absorption edges of AlGaN and GaN, respectively. X-ray diffraction spectra clearly exhibit the GaN (0002), (0004), and AlGaN (0002), (0004) diffraction peaks, and no diffraction peak other than those from the GaN {0001} and AlGaN {0001} planes is found. Reciprocal space mapping indicates that there is notilt between the AlGaN layer and the GaN layer. All results also indicate that the sample is of sound quality and the A1 composition in the AlGaN layer is of high uniformity.
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| Keywords:
81.15.Gh
61.10.-i
78.55.Cr
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Published: 01 August 2000
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.10.-i
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78.55.Cr
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(III-V semiconductors)
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