| Original Articles |
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Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer |
| AO Jin-Ping1,2;ZENG Qing-Ming1;ZHAO Yong-Lin1;LI Xian-Jie1,2,
LIU Wei-Ji1;LIU Shi-Yong2;LIANG Chun-Guang1 |
| 1 Hebei Semiconductor Research Institute, Shijiazhuang 050051
2National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
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| Cite this article: |
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AO Jin-Ping, ZENG Qing-Ming, ZHAO Yong-Lin et al 2000 Chin. Phys. Lett. 17 619-620 |
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Abstract The relatively low Schottky barrier height on In0.52Al0.48As lattice-matched to InP has hampered the achievement of enhancement-mode InAlAs/InGaAs/InP high electron mobility transistors (E-HEMTs). By introducing lattice-mismatched strained aluminum-rich In0.45Al0.55As as the Schottky contact material to enhance the barrier height, we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150mV. A maximum extrinsic transconductance of 660mS/mm and output conductance of 15 mS/mm are measured for 1 μm-gate-length devices at room temperature. The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.
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| Keywords:
85.30.De
85.30.Tv
73.30.+y
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Published: 01 August 2000
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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