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Investigation on Photoluminescence of Ordered Structure in the (AIxGal-x)0.51In0.49P(x = 0.29) Alloys |
| LU Yi-Jun;GAO Yu-Lin;ZHENG Jian-Sheng |
| Department of Physics, Xiamen University, Xiamen 361005 |
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| Cite this article: |
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LU Yi-Jun, GAO Yu-Lin, ZHENG Jian-Sheng 2000 Chin. Phys. Lett. 17 768-769 |
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Abstract The temperature-dependent and excitation-intensity-dependent photoluminescence(PL) spectra are applied to investigate the quaternary (AIxGal-x)0.51In0.49P(x = 0.29)alloys lattice-matched to GaAs. The PL peak is excitation intensity independent, but shows anomalous temperature behavior, where PL peak energy changes with temperature, exhibiting Z-shape dependence. The PL peak energy decreases with increasing temperature from 19K, a blue-shift of PL peak energy occurs between 55K and 84K, afterwards, the PL peak energy decreases monotonously again. This confirms the existence of ordered structure caused by superlattice effect in the (AIxGal-x)0.51In0.49P(x = 0.29)alloys.
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| Keywords:
78.30.Fs
78.55.-m
71.23.-k
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Published: 01 October 2000
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| PACS: |
78.30.Fs
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(III-V and II-VI semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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71.23.-k
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(Electronic structure of disordered solids)
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