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Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt |
CHEN Zhi-Ming1;MA Jian-Ping1;WANG Jian-Nong2;LU Gang2;YU Ming-Bin1;LEI Tian-Min1;GE Wei-Kun2 |
1Department of Applied Electronics, Xian University of Technology, Xian 710048
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
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Cite this article: |
CHEN Zhi-Ming, MA Jian-Ping, WANG Jian-Nong et al 2000 Chin. Phys. Lett. 17 770-772 |
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Abstract Intense wide-band photoluminescence (PL) with high stability to ultraviolet (UV) light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temperature over 1500°C. X-ray diffraction results showed that the sintered material consists of mainly cubic and 6H-SiC crystallites oriented randomly and a small amount of graphite with (002) preferential orientation. PL spectra of the samples were measured under excitation of the incident UV light beam from an He-Cd laser (325 nm, 10mW) in the temperature range from 10 to 300 K. The PL spectra were found to be a single wide-band centered around 2.2 eV at room temperature and to be divided into a much more intensive blue band and a less intensive red band at low temperature. The low temperature PL bands consist of several luminescence peaks that change in intensities relatively with variation of temperature.
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Keywords:
78.55.-m
73.61.Jc
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Published: 01 October 2000
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PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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