Charge States of DX Centers and Electronic Raman Scattering in n-Ga<suB>1-x</suB>AI<suB>x</suB>As

Chin. Phys. Lett.

1998, Vol. 15

Issue (2): 125-127 DOI:

Original Articles

Charge States of DX Centers and Electronic Raman Scattering in n-Ga_1-xAI_xAs

LIAN Shi-yang

Department of Physics, Xiamen University, Xiamen 361005

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LIAN Shi-yang 1998 Chin. Phys. Lett. 15 125-127

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Abstract The observation of the electronic Raman scattering in n-Ga_l-xAI_xAs (x > 0.45) is reported and the charge state of DX centers in III-V alloy semiconductors is discussed. The result shows clearly that the electronic Raman scattering in n-Ga_l-xAI_xAs of indirect band-gap and the persistent photoconductivity in n-Ga_l-xAI_xAs of direct band-gap are equivalent to each other. Both of them originate from the optical induced metastable state of donors in n-Ga_l-xAI_xAs (x > 0.22) at low temperatures. At higher temperatures, this hydrogen-like level is depopulated to the benefit of a stable DX-like deep state.

Keywords: 71.55.Eq 78.30.Fs

Published: 01 February 1998

PACS:	71.55.Eq	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I2/0125

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