Chin. Phys. Lett.  1997, Vol. 14 Issue (8): 637-640    DOI:
Original Articles |
P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy
ZHANG Guo-yi;YANG Zhi-jian;TONG Yu-zhen;JIN Si-xuan;DANG Xiao-zhong;WANG Shu-min
Department of Physics, Mesoscopic Physics Laboratory, Peking University, Beijing 100871
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ZHANG Guo-yi, YANG Zhi-jian, TONG Yu-zhen et al  1997 Chin. Phys. Lett. 14 637-640
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Abstract P-type GaN was grown on AI3O2 substrate by low pressure metalorganic vapor phase epitaxy without any post treatment. The p-type conduction of as-grown GaN has the typical characteristics of a light-doped or high-compensation semiconductor, that is a hole concentration of 2.2 x 1017cm-3 at 77K, which changes to n-type with an electron concentration of 2.7 x 1017 cm-3 at room temperature. After thermal annealing under a N2 ambient, it showed the characteristics of a heavy-doped semiconductor and the hole concentration was enhanced reaching a hole concentrations of 4.2 x 1017 at 77K and 5.7 x 1017 cm-3 at room temperature.
Keywords: 81.15.Gh      68.55.Ce     
Published: 01 August 1997
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.55.Ce  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I8/0637
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ZHANG Guo-yi
YANG Zhi-jian
TONG Yu-zhen
JIN Si-xuan
DANG Xiao-zhong
WANG Shu-min
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