Diffusion of Ion Implanted As in Si<suB>1-x</suB>Ge<suB>x</suB> Epilayers

Chin. Phys. Lett.

1997, Vol. 14

Issue (1): 51-54 DOI:

Original Articles

Diffusion of Ion Implanted As in Si_1-xGe_x Epilayers

ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei

Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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ZOU Lü-fan, WANG Zhan-guo, SUN Dian-zhao et al 1997 Chin. Phys. Lett. 14 51-54

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Abstract Diffusion of implanted As ion in relaxed Si_1-xGe_x was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

Keywords: 66.30.Jt 68.55.Ln

Published: 01 January 1997

PACS:	66.30.Jt
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I1/051

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	ZOU Lü-fan
	WANG Zhan-guo
	SUN Dian-zhao
	FAN Ti-wen
	LIU Xue-feng
	ZHANG Jing-wei

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