Unibond Synthesis of Silicon on Insulator Material

Chin. Phys. Lett.

1997, Vol. 14

Issue (1): 55-58 DOI:

Original Articles

Unibond Synthesis of Silicon on Insulator Material

ZHANG Miao;ZHU Shi-yang^1,2;LI Jin-hua³;NI Ru-shan¹;LIN Cheng-lu¹

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 2Department of Electronic Engineering, Fudan University, Shanghai 200050 Jiangsu Petrochemical Industry College, Changzhou 213016

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ZHANG Miao, ZHU Shi-yang, LI Jin-hua et al 1997 Chin. Phys. Lett. 14 55-58

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Abstract High quality silicon on insulator (SOI) materials have been successfully produced using the unibond method, a new member of SOI technology. The quality of SOI samples has been investigated by using cross-section transmission electron microscopy, Rutherford backscattering and channeling spectrometry and spreading resistance probe technology. Experimental results indicate that both the thickness uniformity and the crystalline quality of the top Si layer are good. The interface between the top Si layer and SiO₂ buried layer is very sharp and straight.

Keywords: 68.65.+g 68.35.-p 61.16.Bg

Published: 01 January 1997

PACS:	68.65.+g
	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)
	61.16.Bg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I1/055

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	ZHANG Miao
	ZHU Shi-yang
	LI Jin-hua
	NI Ru-shan
	LIN Cheng-lu

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