| Original Articles |
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Thermal Annealing of Si+ Implanted Chemical Vapor Deposition SiO2 |
| ZHENG Xiang-qin;LIAO Liang-sheng;YAN Feng;BAO Xi-mao;WANG Wei*, |
| Department of Physics, Nanjing University, Nanjing 210093
*Department of Physics, State University of New York at Albany, Albany NY 12222, USA |
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| Cite this article: |
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ZHENG Xiang-qin, LIAO Liang-sheng, YAN Feng et al 1996 Chin. Phys. Lett. 13 397-400 |
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Abstract Ion implantation was used to bring silicon atoms into chemical vapor deposition SiO2. Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples. Thermal annealing behavior of the photoluminescence was studied The possible origin of the photoluminescence is discussed.
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| Keywords:
81.40.Ef
78.55.Hx
68.55.Ln
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Published: 01 May 1996
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| PACS: |
81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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78.55.Hx
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(Other solid inorganic materials)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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Abstract
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