Green/Blue Photoluminescence from Nanocrystalline Si Thin Films by Rapid Thermal Processing

Chin. Phys. Lett.

1996, Vol. 13

Issue (2): 145-148 DOI:

Original Articles

Green/Blue Photoluminescence from Nanocrystalline Si Thin Films by Rapid Thermal Processing

ZHU Mei-fang;SUN Jing-lan;LIU Shi-xiang;CHEN Gao;CHEN Pei-yi¹;TANG Yong¹

Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100039 ¹Institute of Microelectronics, Tsinghua University, Beijing 100084

Cite this article:

ZHU Mei-fang, SUN Jing-lan, LIU Shi-xiang et al 1996 Chin. Phys. Lett. 13 145-148

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Abstract The green/blue photoluminescence with peaks centered around 2.4 eV at room temperature was observed from nanocrystalline Si thin films prepared by the three-step rapid thermal annealing of hydrogenated amorphous silicon films. The effect of the parameters of rapid thermal annealing on the light emission was studied. A comparison of photoluminescence feature between the films from the rapid thermal annealing and the furnace annealing of a-Si:H has been carried out.

Keywords: 78.55.-m 81.15.Gh

Published: 01 February 1996

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I2/0145

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	ZHU Mei-fang
	SUN Jing-lan
	LIU Shi-xiang
	CHEN Gao
	CHEN Pei-yi
	TANG Yong

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