| Original Articles |
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Polarized Infrared Spectra of Intersubband Transitions in GaAs/AlGaAs Step Multiquantum Wells |
| CUI Da-fu;YUAN Zhen-yu;CHEN Zheng-hao;MA Jian-wei;ZHOU Yue-liang;LÜ Hui-bin;HE Meng;YANG Gno-zhen;ZHANG Shu-de* |
| Institute of Physics, Chinese Academy of Sciences, Beijing 100080
*Institute of Rock and Mineral Analysis, Beijing 100037 |
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| Cite this article: |
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CUI Da-fu, YUAN Zhen-yu, CHEN Zheng-hao et al 1996 Chin. Phys. Lett. 13 149-152 |
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Abstract The polarization dependence of conduction intersubband transitions in GaAs/AIGaAs step multiquantum well structures has been studied using infrared spectroscopy. For S-polarized 45°oblique angle incidence configuration with respect to sample surface normal, the transverse electric (TE) active intersubband transitions were observed. Both transverse electric and transverse magnetic (TM) active intersubband transitions were obtained in P-polarized incidence at 45°angle on sample, which shows a small energy splitting between TE and TM absorption peaks.
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| Keywords:
78.66.Fd
42.50.Hz
73.20.Dx
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Published: 01 February 1996
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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42.50.Hz
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(Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift)
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73.20.Dx
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