Mechanism for the Nanometer Scale Modification on HOPG
Surface by Scanning Tunneling Microscope

Chin. Phys. Lett.

1993, Vol. 10

Issue (9): 535-538 DOI:

Original Articles

Mechanism for the Nanometer Scale Modification on HOPG Surface by Scanning Tunneling Microscope

WANG Zhonghuai;DAI Changchun. ZHANG Pingchen;HUANG Guizhen. LI Renli. GUO Yi;BAI Chunli

Institute of Chemistry. Academia Sinica. Beijing 100080

Cite this article:

WANG Zhonghuai, DAI Changchun. ZHANG Pingchen, HUANG Guizhen. LI Renli. GUO Yi et al 1993 Chin. Phys. Lett. 10 535-538

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Abstract A technique applying voltage across the tunnel junction for writing permanent features on graphite with lines about 10nm width using our home-built scanning tunneling microscope has been presented. Multiple effects while modifying the surface arc often met. The phenomena are explained in terms of the strong electric field existing at the junction between the tip and the surface. In addition, the shape of the structure indented by the tip is in agreement with that of the tip.

Keywords: 61.16.Di

Published: 01 September 1993

PACS:

61.16.Di

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1993/V10/I9/0535

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	WANG Zhonghuai
	DAI Changchun. ZHANG Pingchen
	HUANG Guizhen. LI Renli. GUO Yi
	BAI Chunli

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