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Microstructure and Electron Conduction Mechanism of Hydrogenated Nano-crystalline Silicon Films |
| HE Yuliang1,4;CHU Yiming2,4;LIN Hongyi3;JIANG Shusheng4 |
| 1The Amorphous Physics Research Laboratory Beijing University of Aeronautics and Astronautics, Beijing 100083
2Beijing Laboratory of Electronic Microscopy, Academia Sinica, Beijing 100080
3Department of Electronic Engineering, Beijing Institute of Technology, Beijing 100081
4Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008
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| Cite this article: |
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HE Yuliang, CHU Yiming, LIN Hongyi et al 1993 Chin. Phys. Lett. 10 539-542 |
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Abstract The hydrogenated nano-crystalline silicon (nc-Si:H) films have deposited with plasma enhanced chemical vapor deposition method. The microstructure of these films has been studied by transmission electron microscopy and high resolution transmission electron microscopy. The nc-Si H films show fiber texture structure. The fractal dimension of this structure has been calculated with a Fourier filtered image. The relationship between conductivity and temperature has also been studied and the mechanism of electron conduction is discussed.
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| Keywords:
61.16.Di
72.80.-r
73.40.-c
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Published: 01 September 1993
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