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Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells |
| Shahzad Naseem |
| Centre for Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore (PAKISTAN). |
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| Cite this article: |
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Shahzad Naseem 1991 Chin. Phys. Lett. 8 255-258 |
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Abstract Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350°C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.
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73.40.Lq
81.15.Ef
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Published: 01 May 1991
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Ef
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