Ar Ion Implantation Induced Tc Degradation of YBa2Cu3O7-x Thin Films

Chin. Phys. Lett.

1991, Vol. 8

Issue (3): 157-160 DOI:

Original Articles

Ar Ion Implantation Induced T_c Degradation of YBa₂Cu₃O_7-x Thin Films

LI Yijie;REN Congxin;CHEN Guoliang;LIN Zixin;ZOU Shichang

Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050

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LI Yijie, REN Congxin, CHEN Guoliang et al 1991 Chin. Phys. Lett. 8 157-160

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Abstract The Ar ion implantation induced changes of structure and transport properties of YBa₂Cu₃O_7-x thin films were studied as a function of fluence. Both the zero resistance temperature T_c and the critical current density Jc decrease rapidly with fluence, however, the transition temperature onset almost remains constant at low fluences. At dose of 1.2x10¹³Ar/cm², the sample has a metal to semiconductor phase transition. When the fluence further increases, a crystalline to amorphous phase transition occurs, and the sample becomes insulator.

Keywords: 74.60.Mj 74.65.+n 74.75.+t

Published: 01 March 1991

PACS:	74.60.Mj
	74.65.+n
	74.75.+t

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I3/0157

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	LI Yijie
	REN Congxin
	CHEN Guoliang
	LIN Zixin
	ZOU Shichang

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