| Original Articles |
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THE TEMPERATURE DEPENDENCE OF THE PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES
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| ZHU Meifang;SONGJun;LI Chenxi* |
| Department of Physics, Graduate School, Academia Sinica, Beijing
*Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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ZHU Meifang, SONGJun, LI Chenxi 1989 Chin. Phys. Lett. 6 405-408 |
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Abstract The temperature dependence of the photoconductivity σp(T) in a-Si:H/a-SiNx:H superlattices does not decrease with temperature decreasing in the range of 120-250K, but it is temperature independent showing a wide plateau of photoconductivity σp in the superlattices with thickness of a-Si:H layer dsi=12 and 57nm. The plateau of σp(T) depends on the light intensity. One type of interface state as sensitizing centre was proposed. The parameters of the sensitizing centre were determined by using computer fitting of σp(T). The computed results are the same with the experimental data.
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| Keywords:
72.40.+w
72.80.Ng
73.40.Kp
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Published: 01 September 1989
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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72.80.Ng
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(Disordered solids)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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