NN PAIR EMISSION IN GaAs<suB>0.15</suB>P<suB>0.85</suB>: N UNDER HYDROSTATIC PRESSURE

Chin. Phys. Lett.

1988, Vol. 5

Issue (8): 353-356 DOI:

Original Articles

NN PAIR EMISSION IN GaAs_0.15P_0.85: N UNDER HYDROSTATIC PRESSURE

ZHANG Yong;YU Qi;ZHENG Jiansheng;YAN Bingzhang;WU Boxi;LI Guohua;WANG Zhaoping;HAN Hexiang

Department of Physics, Xiamen University, Xiamen Institute of Semiconductors Academia Sinica, Beijing

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ZHANG Yong, YU Qi, ZHENG Jiansheng et al 1988 Chin. Phys. Lett. 5 353-356

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Abstract The photoluminescence of GaAs_0.15P_0.85: N has been studied at 77K under hydrostatic pressure. The NN₁ emission is clearly observed when P>l0kbar. This result indicates that pressure enhances the thermally assisted N_x→NN₁ exciton transfer. The pressure behaviors of N_x and NN₁ levels are analysed.

Published: 01 August 1988

PACS:	7855
	6250
	7135

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1988/V5/I8/0353

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	ZHANG Yong
	YU Qi
	ZHENG Jiansheng
	YAN Bingzhang
	WU Boxi
	LI Guohua
	WANG Zhaoping
	HAN Hexiang

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