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Atomic and Electronic Structures of Submonolayer In on Cu(111) |
| WANG Peng1;XUN Kun1;JIA Jin-Feng2;GAO Xing2;QIAN Hai-Jie3;LIU Feng-Qin3;Ibrahim Kurash3;ZHOU Yu-Mei2;XUE Qi-Kun2;WU Si-Cheng 1
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| 1Department of Physics, Peking University, Beijing 100871
2Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
3Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
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| Cite this article: |
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WANG Peng, XUN Kun, JIA Jin-Feng et al 2002 Chin. Phys. Lett. 19 409-412 |
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Abstract We have studied the atomic and electronic structures of submonolayer In on Cu(111) using synchrotron radiation photoemission and scanning tunnelling microscopy (STM). At very low coverage, In atoms were favorable to occupy substitutional sites and to be distributed evenly on Cu(111) surface. At higher coverage of 0.33 and 0.50 ML, two ordered reconstructure phases of (√3 x√3)R30°and (2 x 1) have been observed for the first time. The two dimensional states of In induced valence bands in the (√3 x√3)R30°phase were measured by angle-resovled photoemission. The result is in good agreement with theoretical calculations.
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| Keywords:
79.60.Dp
73.20.At
61.16.Ch
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Published: 01 March 2002
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| PACS: |
79.60.Dp
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(Adsorbed layers and thin films)
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73.20.At
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(Surface states, band structure, electron density of states)
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61.16.Ch
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