Chin. Phys. Lett.  2020, Vol. 37 Issue (4): 047201    DOI: 10.1088/0256-307X/37/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Negative Magnetoresistance in Antiferromagnetic Topological Insulator EuSn$_2$As$_2$$^{*}$
Huan-Cheng Chen1, Zhe-Feng Lou1, Yu-Xing Zhou1, Qin Chen1, Bin-Jie Xu1, Shui-Jin Chen1, Jian-Hua Du2, Jin-Hu Yang3, Hang-Dong Wang3, Ming-Hu Fang1,4**
1Department of Physics, Zhejiang University, Hangzhou 310027
2Department of Applied Physics, China Jiliang University, Hangzhou 310018
3Department of Physics, Hangzhou Normal University, Hangzhou 310036
4Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093
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Huan-Cheng Chen, Zhe-Feng Lou, Yu-Xing Zhou et al  2020 Chin. Phys. Lett. 37 047201
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Abstract The measurements of magnetization, longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic (AFM) topological insulator EuSn$_2$As$_2$. It is confirmed that our EuSn$_2$As$_2$ crystal is a heavily hole doping A-type AFM metal with the Néel temperature $T_{\rm N}$ = 24 K, with a metamagnetic transition from an AFM to a ferromagnetic (FM) phase occurring at a certain critical magnetic field for the different field orientations. Meanwhile, we also find that the carrier concentration does not change with the evolution of magnetic order, indicating that the weak interaction between the localized magnetic moments from Eu$^{2+}$ $4f^7$ orbits and the electronic states near the Fermi level. Although the quantum anomalous Hall effect (AHE) is not observed in our crystals, it is found that a relatively large negative magnetoresistance ($-$13%) emerges in the AFM phase, and exhibits an exponential dependence upon magnetic field, whose microscopic origin is waiting to be clarified in future research.
Received: 12 February 2020      Published: 24 March 2020
PACS:  72.15.-v (Electronic conduction in metals and alloys)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.50.Ee (Antiferromagnetics)  
Fund: Supported by the National Key Research and Development Program of China under Grant No. 2016YFA0300402, the National Basic Research Program of China under Grant No. 2015CB921004, the National Natural Science Foundation of China under Grant Nos. 11974095 and 11374261, the Zhejiang Natural Science Foundation (No. LY16A040012), and the Fundamental Research Funds for the Central Universities.
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http://cpl.iphy.ac.cn/10.1088/0256-307X/37/4/047201       OR      http://cpl.iphy.ac.cn/Y2020/V37/I4/047201
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Huan-Cheng Chen
Zhe-Feng Lou
Yu-Xing Zhou
Qin Chen
Bin-Jie Xu
Shui-Jin Chen
Jian-Hua Du
Jin-Hu Yang
Hang-Dong Wang
Ming-Hu Fang
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