Chin. Phys. Lett.  2019, Vol. 36 Issue (7): 078101    DOI: 10.1088/0256-307X/36/7/078101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Van der Waals Epitaxy of Anatase TiO$_{2}$ on mica and Its Application as Buffer Layer
Han Xu1, Zhen-Lin Luo1**, Chang-Gan Zeng1, Chen Gao1,2**
1National Synchrotron Radiation Laboratory & CAS Key Laboratory of Materials for Energy Conversion, Department of Physics, University of Science and Technology of China, Hefei 230026
2Beijing Advanced Sciences and Innovation Center of Chinese Academy of Sciences, Beijing 101407
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Han Xu, Zhen-Lin Luo, Chang-Gan Zeng et al  2019 Chin. Phys. Lett. 36 078101
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Abstract MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waals interaction decreases the tolerable lattice mismatch and thus limits the species of function oxides that are able to be epitaxially grown on mica. We successfully fabricate relatively high-quality epitaxial anatase TiO$_{2}$ thin films on mica substrates. Structural analyses reveal that the carefully chosen growth temperature (650$^\circ\!$C) and suitable crystalline phase (anatase phase) of TiO$_{2}$ are the key issues for this van der Waals epitaxy. Moreover, as a buffer layer, the TiO$_{2}$ layer successfully suppresses the decomposition of BiFeO$_{3}$ and the difficulty of epitaxial growth of BiFeO$_{3}$ is decreased. Therefore, relatively high-quality anatase TiO$_{2}$ is proved to be an effective buffer layer for fabricating more functional oxides on mica.
Received: 05 March 2019      Published: 20 June 2019
PACS:  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
  68.55.-a (Thin film structure and morphology)  
  61.05.cj (X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.)  
Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFA0300102, the National Natural Science Foundation of China under Grant Nos 11675179, 11434009 and 11374010, and the Fundamental Research Funds for the Central Universities under Grant No WK2340000065.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/36/7/078101       OR      https://cpl.iphy.ac.cn/Y2019/V36/I7/078101
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Han Xu
Zhen-Lin Luo
Chang-Gan Zeng
Chen Gao
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