Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K

doi:10.1088/0256-307X/35/9/098502

Chin. Phys. Lett.

2018, Vol. 35

Issue (9): 098502 DOI: 10.1088/0256-307X/35/9/098502

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K

Yuan Liu^1,2,3, Li Wang^2,3, Shu-Ting Cai^1**, Ya-Yi Chen^2,3, Rongsheng Chen^2,3, Xiao-Ming Xiong¹, Kui-Wei Geng²

¹School of Automation, Guangdong University of Technology, Guangzhou 510006
²School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640
³Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029

Cite this article:

Yuan Liu, Li Wang, Shu-Ting Cai et al 2018 Chin. Phys. Lett. 35 098502

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Abstract The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10–400 K. The variation of electrical parameters (threshold voltage, field effect mobility, sub-threshold swing, and leakage current) with decreasing temperature are then extracted and analyzed. Moreover, the dominated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.

Received: 14 June 2018 Published: 29 August 2018

PACS:	85.30.Tv	(Field effect devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.50.Dn	(Low-field transport and mobility; piezoresistance)
	77.55.hf	(ZnO)

Fund: Supported by the National Natural Science Foundation of China under Grant No 61574048, the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172, the International Science and Technology Cooperation Program of Guangzhou under Grant No 201807010006, and the Opening Fund of Key Laboratory of Silicon Device Technology under Grant No KLSDTJJ2018-6.

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https://cpl.iphy.ac.cn/10.1088/0256-307X/35/9/098502 OR https://cpl.iphy.ac.cn/Y2018/V35/I9/098502

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	Yuan Liu
	Li Wang
	Shu-Ting Cai
	Ya-Yi Chen
	Rongsheng Chen
	Xiao-Ming Xiong
	Kui-Wei Geng

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