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Two-Photon Interference Constructed by Two Hong–Ou–Mandel Effects in One Mach-Zehnder Interferometer
Rui Liu, Ling-Jun Kong, Zhou-Xiang Wang, Yu Si, Wen-Rong Qi, Shuang-Yin Huang, Chenghou Tu, Yongnan Li, Hui-Tian Wang
Chin. Phys. Lett. 2018, 35 (9):
090303
.
DOI: 10.1088/0256-307X/35/9/090303
We present a two-photon interference experiment in a modified Mach-Zehnder (MZ) interferometer in which two Hong–Ou–Mandel effects occur in tandem and construct superposed two-photon states. The signal photons pass both the arms of the MZ interferometer while the idler photons pass one arm only. Interestingly, the probability of the idler photons emerging from any output port still shows a sine oscillation with the two-photon phase difference and it can be characterized only by the indistinguishability of the two-photon amplitudes. We also observe a two-photon interference pattern with a period being equal to the wavelength of the parametric photons instead of the two-photon photonic de Broglie wavelength due to the presence of two-photon phase difference, in particular, with complementary probabilities of finding the two-photon pairs in two output ports. The abundant observations can facilitate a more comprehensive understanding of the two-photon interference.
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Generating Proton Beams Exceeding 10MeV Using High Contrast 60TW Laser
Yi-Xing Geng, Qing-Liao, Yin-Ren Shou, Jun-Gao Zhu, Xiao-Han Xu, Min-Jian Wu, Peng-Jie Wang, Dong-Yu Li, Tong-Yang, Rong-Hao Hu, Da-Hui Wang, Yan-Ying Zhao, Wen Jun Ma, Hai-Yang Lu, Zhong-Xi Yuan, Chen-Lin, Xue-Qing Yan
Chin. Phys. Lett. 2018, 35 (9):
092901
.
DOI: 10.1088/0256-307X/35/9/092901
A prototype of a laser driven proton accelerator is built at Peking University. Protons exceeding 10 MeV are accelerated from micrometer-thick aluminum targets irradiated by tightly focused laser pulse with 1.8 J energy and 30 fs duration. The beam energy spectrum and charge distribution are measured by a Thomson parabola spectrometer and radiochromic film stacks. The sensitivity of proton cut-off energy to the focusing of the laser beam, the pulse duration, and the foil thickness are systematically investigated in the experiments. Stable proton beams have been produced with an optimized parameter set, providing a cornerstone for the future applications of laser accelerated protons.
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Crystal Structure and Judd–Ofelt Analysis of Er$^{3+}$ Doped LuAl$_{3}$(BO$_{3}$)$_{4}$ Crystal
Jun-Ying Zhang, Shu-Juan Han, Lin-Tao Liu, Qian Yao, Wei-Min Dong, Jing Li
Chin. Phys. Lett. 2018, 35 (9):
096101
.
DOI: 10.1088/0256-307X/35/9/096101
Single crystal Er:LuAl$_{3}$(BO$_{3}$) (Er:LuAB) is successfully grown using the top-seeded solution growth method with a $K_{2}$Mo$_{3}$O$_{10}$ flux. The cell parameters of the grown crystal are estimated by an x-ray single crystal diffactometor and x-ray powder diffraction analysis. The result indicates that it still belongs to the space group $R32$. The obtained unit-cell parameters are $a=9.2793(19)$ Å, $c=7.210(3)$ Å, $V=537.65(27)$ Å$^{3}$, and $Z=3$. The absorption spectrum is measured at room temperature. The spectroscopy properties are investigated based on the Judd–Ofelt (J-O) theory, and the effective J-O parameters were calculated to be ${\it \Omega}_{2}=8.33\times10^{-20}$, ${\it \Omega}_{4}= 3.83\times10^{-20}$, and ${\it \Omega}_{6}=3.55\times10^{-20}$. The emission spectra of Er:LuAB crystal at room temperature are also studied and the $^{4}I_{11/2}\to {}^{4}I_{13/2}$ fluorescence around 3170 nm is observed. The emission cross section calculated by the F-L formula is $8.6\times10^{-20}$ cm$^{2}$. These results suggest that the Er:LuAB crystal may be a promising $\sim$3 μm laser material.
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Aligned Elongation of Ag Nanoparticles Embedded in Silica Irradiated with High Energy Ni Ions
Yi-Tao Yang, Chong-Hong Zhang, Chang-Hao Su, Zhao-Nan Ding, Yin Song, Yu-Guang Chen
Chin. Phys. Lett. 2018, 35 (9):
096102
.
DOI: 10.1088/0256-307X/35/9/096102
Metallic nanoparticle (NP) shapes have a significant influence on the property of composite embedded with metallic NPs. Swift heavy ion irradiation is an effective way to modify shapes of metallic NPs embedded in an amorphous matrix. We investigate the shape deformation of Ag NPs with irradiation fluence, and 357 MeV Ni ions are used to irradiate the silica containing Ag NPs, which are prepared by ion implantation and vacuum annealing. The UV-vis results show that the surface plasmon resonance (SPR) peak from Ag NPs shifts from 400 to 377 nm. The SPR peak has a significant shift at fluence lower than $1\times10^{14}$ ions/cm$^{2}$ and shows less shift at fluence higher than $1\times10^{14}$ ions/cm$^{2}$. The TEM results reveal that the shapes of Ag NPs also show significant deformation at fluence lower than $1\times10^{14}$ ions/cm$^{2}$ and show less deformation at fluence higher than $1\times10^{14}$ ions/cm$^{2}$. The blue shift of the SPR peak is considered to be the consequence of defect production and Ag NP shape deformation. Based on the thermal spike model calculation, the temperature of the silica surrounding Ag particles first increases rapidly, then the region of Ag NPs close to the interface of Ag/silica is gradually heated. Therefore, the driven force of Ag NPs deformation is considered as the volume expansion of the first heated silica layer surrounding Ag NPs.
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Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe$_{2}$
Ji-Xiang Gong, Jun Yang, Min Ge, Yong-Jian Wang, Dan-Dan Liang, Lei Luo, Xiu Yan, Wei-Li Zhen, Shi-Rui Weng, Li Pi, Chang-Jin Zhang, Wen-Ka Zhu
Chin. Phys. Lett. 2018, 35 (9):
097101
.
DOI: 10.1088/0256-307X/35/9/097101
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe$_{2}$. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe$_{2}$.
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Fano Effect and Anti-Resonance Band in a Parallel-Coupled Double Quantum Dot System with Two Multi-Quantum Dot Chains
Ze-Long He, Qiang Li, Kong-Fa Chen, Ji-Yuan Bai, Sui-Hu Dang
Chin. Phys. Lett. 2018, 35 (9):
097301
.
DOI: 10.1088/0256-307X/35/9/097301
A parallel-coupled double quantum dot (PCDQD) system with two multi-quantum dot chains is designed. Conductance versus Fermi energy level is investigated utilizing the non-equilibrium Green's function approach. If two quantum dots are added on each side of the PCDQD system, additional Breit–Wigner and Fano resonances occur in the conductance spectra. If quantum dots are added on one side of the system, small Fano resonances can be observed in the conductance spectra. Adjusting the number of side-coupled quantum dots, the anti-resonance bands emerge at different positions, which makes the system applicable as a quantum switching device. Moreover, the $I$–$V$ characteristic curve presents the step characteristic and the width of the step decreases with increasing the number of side-coupled quantum dots.
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Different Thermal Stabilities of Cation Point Defects in LaAlO$_{3}$ Bulk and Films
Li Guan, Guang-Ming Shen, Hao-Tian Ma, Guo-Qi Jia, Feng-Xue Tan, Ya-Nan Liang, Zhi-Ren Wei
Chin. Phys. Lett. 2018, 35 (9):
097302
.
DOI: 10.1088/0256-307X/35/9/097302
Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO$_{3}$ bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAlO$_{3}$ under O-rich conditions, while the Al$_{\rm La}$ antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO$_{3}$ films. For LaO-terminated LaAlO$_{3}$ films, La or Al vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO$_{2}$-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An Al interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlO$_{3}$-related materials.
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Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
Shu-Zhe Mei, Quan Wang, Mei-Lan Hao, Jian-Kai Xu, Hong-Ling Xiao, Chun Feng, Li-Juan Jiang, Xiao-Liang Wang, Feng-Qi Liu, Xian-Gang Xu, Zhan-Guo Wang
Chin. Phys. Lett. 2018, 35 (9):
098101
.
DOI: 10.1088/0256-307X/35/9/098101
Metal organic chemical vapor deposition (MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance, the flow field and temperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to study the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding significance for the growth of GaN film materials.
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Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates
Qing-feng Wu, Sheng Cao, Chun-lan Mo, Jian-li Zhang, Xiao-lan Wang, Zhi-jue Quan, Chang-da Zheng, Xiao-ming Wu, Shuan Pan, Guang-xu Wang, Jie Ding, Long-quan Xu, Jun-lin Liu, Feng-yi Jiang
Chin. Phys. Lett. 2018, 35 (9):
098501
.
DOI: 10.1088/0256-307X/35/9/098501
Effect of hydrogen (H$_2$) treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting diodes (LEDs) grown on Si substrates is experimentally investigated. We prepare two LED samples with different carrier gas compositions during the growth of GaN barrier. In the H$_2$ free LED, the GaN barrier is grown in full nitrogen (N$_2$) atmosphere. For the other H$_2$ treated LED, a mixture of N$_2$ and H$_2$ was used as the carrier gas. It is observed that V-shaped pits decrease in size after H$_2$ treatment by means of the scanning electron microscope. Due to the fact that the p-n junction interface would be closer to the p-GaN as a result of smaller V-shaped pits, the tunneling barrier for holes to inject into the InGaN quantum well would become thicker after H$_2$ treatment. Hence, the external quantum efficiency of the H$_2$ treated LED is lower compared to the H$_2$ free LED. However, LEDs would exhibit a better leakage behavior after H$_2$ treatment during the GaN barrier growth because of more effective blocking of the threading dislocations as a result of the H$_2$ etching at V-shaped pits.
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Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K
Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng
Chin. Phys. Lett. 2018, 35 (9):
098502
.
DOI: 10.1088/0256-307X/35/9/098502
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10–400 K. The variation of electrical parameters (threshold voltage, field effect mobility, sub-threshold swing, and leakage current) with decreasing temperature are then extracted and analyzed. Moreover, the dominated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.
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Magnetic Field of a Compact Spherical Star under f(R,T) Gravity
Safiqul Islam, Shantanu Basu
Chin. Phys. Lett. 2018, 35 (9):
099501
.
DOI: 10.1088/0256-307X/35/9/099501
We present the interior solutions of distributions of magnetized fluid inside a sphere in $f(R,T)$ gravity. The magnetized sphere is embedded in an exterior Reissner–Nordström metric. We assume that all physical quantities are in static equilibrium. The perfect fluid matter is studied under a particular form of the Lagrangian density $f(R,T)$. The magnetic field profile in modified gravity is calculated. Observational data of neutron stars are used to plot suitable models of magnetized compact objects. We reveal the effect of $f(R,T)$ gravity on the magnetic field profile, with application to neutron stars, especially highly magnetized neutron stars found in x-ray pulsar systems. Finally, the effective potential $V_{\rm eff}$ and innermost stable circular orbits, arising out of the motion of a test particle of negligible mass influenced by attraction or repulsion from the massive center, are discussed.
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24 articles
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