Chin. Phys. Lett.  2017, Vol. 34 Issue (9): 097304    DOI: 10.1088/0256-307X/34/9/097304
Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates
Zhao-Zhao Hou1,2, Gui-Lei Wang1,2, Jin-Juan Xiang1,2, Jia-Xin Yao1,2, Zhen-Hua Wu1, Qing-Zhu Zhang1, Hua-Xiang Yin1,2**
1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2University of Chinese Academy of Sciences, Beijing 100049
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Abstract A novel high-$\kappa$ Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of $\sim $4 V, a small leakage current density of $\sim $2 $\times$ 10$^{-6}$ Acm$^{-2}$ at a gate voltage of 7 V, a high charge trapping density of $1.42\times 10^{13}$ cm$^{-2}$ at a working voltage of $\pm$10 V and good retention characteristics are observed. Furthermore, the programming ($\Delta V_{\rm FB}=2.8$ V at 10 V for 10 μs) and erasing speeds ($\Delta V_{\rm FB}=-1.7$ V at $-$10 V for 10 μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-$\kappa$ Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
Received: 05 June 2017      Published: 15 August 2017
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  77.55.D- (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))  
  77.55.Px (Epitaxial and superlattice films)  
Fund: Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.
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Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang et al  2017 Chin. Phys. Lett. 34 097304
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Zhao-Zhao Hou
Gui-Lei Wang
Jin-Juan Xiang
Jia-Xin Yao
Zhen-Hua Wu
Qing-Zhu Zhang
Hua-Xiang Yin
[1]Maikap S et al 2011 J. Nanomater. 2011 810879
[2]Lan X et al 2013 J. Appl. Phys. 114 044104
[3]Lee K H et al 2013 Jpn. J. Appl. Phys. 53 014001
[4]Capogreco E et al 2015 IEEE Int. Memory. Workshop (Monterey CA USA 17–20 May 2015) p 109
[5]Capogreco E et al 2015 IEEE Int. Electron. Devices Meeting (Washington DC 7–9 December 2015) p 3.1.1
[6]Liu L J et al 2010 Solid-State Electron. 54 1113
[7]Liu L J et al 2012 IEEE Electron Device Lett. 33 1264
[8]Zhang E et al 2014 ACS Nano 9 612
[9]Verrelli E and Tsoukalas D 2011 Microelectron. Eng. 88 1189
[10]Nicollian E H and Brews J R 1982 Metal Oxide Semiconductor (MOS) Physics and Technology (New York: Wiley) vol 1987 chap 5 p 214
[11]Ando T et al 2017 IEEE Electron Device Lett. 38 303
[12]Maikap S et al 2008 Nanotechnology 19 435202
[13]Maikap S et al 2007 Semicond. Sci. Technol. 22 884
[14]Maikap S et al 2009 J. Electrochem. Soc. 156 K28
[15]Wang S et al 2010 Appl. Phys. Lett. 96 143109
[16]Zhou G et al 2015 Curr. Appl. Phys. 15 279
[17]Shi Y et al 1998 J. Appl. Phys. 84 2358
[18]Zhu C et al 2010 Appl. Phys. Lett. 97 253503
[19]Qiu X Y et al 2014 Thin Solid Films 562 674
[20]Spassov D et al 2016 Thin Solid Films 614 7
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