Chin. Phys. Lett.  2017, Vol. 34 Issue (7): 070701    DOI: 10.1088/0256-307X/34/7/070701
A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode
Xiao-Yu Liu1,2, Yong Zhang2**, De-Jiao Xia2, Tian-Hao Ren2, Jing-Tao Zhou1**, Dong Guo1, Zhi Jin1**
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731
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Xiao-Yu Liu, Yong Zhang, De-Jiao Xia et al  2017 Chin. Phys. Lett. 34 070701
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Abstract A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV/mW at 630 GHz. The measured noise effective power (NEP) is less than 35 pW/Hz$^{0.5}$ at 570–630 GHz. The minimum NEP is 14 pW/Hz$^{0.5}$ at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
Received: 02 March 2017      Published: 23 June 2017
PACS:  07.57.-c (Infrared, submillimeter wave, microwave and radiowave instruments and equipment)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
  84.40.Az (Waveguides, transmission lines, striplines)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 61434006, and the Basic Application Research of Sichuan Province under Grant No 2017JY0227.
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Xiao-Yu Liu
Yong Zhang
De-Jiao Xia
Tian-Hao Ren
Jing-Tao Zhou
Dong Guo
Zhi Jin
[1]Chen H, Sun Y M and Wang L 2009 Chin. Phys. B 18 4287
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