| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130nm Technology Node |
| Le-Qing Zhang1,2, Jian Lu3, Jia-Ling Xu3, Xiao-Nian Liu1,2, Li-Hua Dai1,2, Yi-Ran Xu1,2, Da-Wei Bi1**, Zheng-Xuan Zhang1, |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
3Shanghai Engineering Center for Microsatellites, Chinese Academy of Sciences, Shanghai 201203
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| Cite this article: |
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Le-Qing Zhang, Jian Lu, Jia-Ling Xu et al 2017 Chin. Phys. Lett. 34 118504 |
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Abstract A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transfer (LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles $\theta =0^{\circ}$, 30$^{\circ}$ and 60$^{\circ}$ with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40 MeVcm$^{2}$/mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to $\cos \theta$, furthermore the effective LET for SOI is more closely in inverse proportion to $\cos \theta$ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to $\cos \theta$ very well, which is also specifically explained.
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Received: 14 August 2017
Published: 25 October 2017
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| PACS: |
85.40.-e
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(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
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29.27.Fh
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(Beam characteristics)
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| Fund: Supported by the Key Laboratory of Microsatellites, Chinese Academy of Sciences. |
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