| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Programmable Logic Based on Large Magnetoresistance of Germanium |
| Jiao-Jiao Chen1,2, Hong-Guang Piao1,2, Zhao-Chu Luo1,2, Cheng-Yue Xiong1,2, Xiao-Zhong Zhang1,2** |
1Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084
2National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084
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| Cite this article: |
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Jiao-Jiao Chen, Hong-Guang Piao, Zhao-Chu Luo et al 2016 Chin. Phys. Lett. 33 047501 |
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Abstract We find extremely large low-magnetic-field magnetoresistance ($\sim$350% at 0.2 T and $\sim$180% at 0.1 T) in germanium at room temperature and the magnetoresistance is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic including AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.
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Received: 30 November 2015
Published: 29 April 2016
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| PACS: |
75.47.Pq
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(Other materials)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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73.40.Sx
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(Metal-semiconductor-metal structures)
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