| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates |
| Ting Wang1**, Hui-Yun Liu2, Jian-Jun Zhang1** |
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Department of Electronic & Electrical Engineering, University College London, Torrington Place WC1E 7JE, United Kingdom
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| Cite this article: |
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Ting Wang, Hui-Yun Liu, Jian-Jun Zhang 2016 Chin. Phys. Lett. 33 044207 |
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Abstract The first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si (100) substrate. Here the direct epitaxial growth condition of 1.3-μm InAs/GaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence (PL) measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial GaAs nucleation temperature and thickness with strongest room-temperature emission at 400$^\circ\!$C (170 nm nucleation layer thickness), due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
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Received: 23 December 2015
Published: 29 April 2016
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