| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes |
| LIU Fei1,2, YANG Sen1,2, ZHOU Dong1,2, LU Hai1,2**, ZHANG Rong1,2, ZHENG You-Dou1,2 |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
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| Cite this article: |
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LIU Fei, YANG Sen, ZHOU Dong et al 2015 Chin. Phys. Lett. 32 088503 |
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Abstract In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.
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Received: 17 March 2015
Published: 02 September 2015
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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