| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Potential Barrier Behavior of BaTiO3–(Bi0.5Na0.5)TiO3 Positive Temperature Coefficient of Resistivity Ceramic |
| LENG Sen-Lin1**, SHI Wei1, LI Guo-Rong2, ZHENG Liao-Ying2 |
1Institute of Physics and Electronics Engineering, Tongren University, Tongren 554300
2Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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LENG Sen-Lin, SHI Wei, LI Guo-Rong et al 2015 Chin. Phys. Lett. 32 047202 |
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Abstract High-Curie-temperature (Tc) lead-free Y-doped 90 mol%BaTiO3–10 mol%(Bi0.5Na0.5)TiO3 ceramic with positive temperature coefficient of resistivity (PTCR) is prepared by the conventional solid state reaction in nitrogen atmosphere. The PTCR ceramic exhibits a room-temperature resistivity (ρ25) of ～500 Ω?cm and a high PTCR effect (maximum resistivity (ρmax)/minimum resistivity (ρmin)) of ～4.5 orders of magnitude. A capacitance-voltage approach is first employed to calculate the potential barrier (?) of the grain boundary of PTCR ceramic above Tc. It is found that the potential barrier changes from 0.17 to 0.77 eV as the temperature increases from 180 to 220°C, which is very close to the predictions of the Heywang–Jonker model, suggesting that the capacitance-voltage method is valid to estimate the potential barrier of PTCR thermistor ceramics.
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Received: 05 January 2015
Published: 30 April 2015
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| PACS: |
72.80.-r
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(Conductivity of specific materials)
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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81.05.Je
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(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
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[1] Saburi O 1959 J. Phys. Soc. Jpn. 14 1159
[2] Goodman G 1963 J. Am. Ceram. Soc. 46 48
[3] Kuwabara M 1984 Solid-State Electron. 27 929
[4] Heywang W 1961 Solid-State Electron. 3 51
[5] Jonker G H 1964 Solid-State Electron. 7 895
[6] Buscaglia M T, Viviani M, Buscaglia V and Bottino C 2002 J. Am. Ceram. Soc. 85 1569
[7] Alles A B and Burdick V L 1993 J. Am. Ceram. Soc. 76 401
[8] Huybrechts B, Ishizaki K and Takata M 1995 J. Mater. Sci. 30 2463
[9] Takeda H, Aoto W and Shiosaki T 2005 Appl. Phys. Lett. 87 102104
[10] Leng S L, Li G R, Zheng L Y, Wang T B and Yin Q R 2009 J. Am. Ceram. Soc. 92 2772
[11] Yuan Q B, Pu Y P and Wei J F 2013 J. Electroceram. 30 98
[12] Li H L, Kang J N, Guo F, Qu Y F and Yang D A 2013 Ceram. Int. 39 7589
[13] Leng S L, Li G R, Zheng L Y, Cheng L H and Zeng J T 2011 J. Am. Ceram. Soc. 94 1340
[14] Xiang P H, Harinaka H, Takeda H, Nishida T, Uchiyama K and Shiosaki T 2008 J. Appl. Phys. 104 094108
[15] Mukae K, Tsuda K and Nagasawa I 1979 J. Appl. Phys. 50 4475
[16] Alim M A 1995 J. Appl. Phys. 78 4776
[17] Cheng P F, Li S T and Jiao X L 2006 Acta Phys. Sin. 55 4253 (in Chinese) |
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