| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors |
| SHEN Hua-Jun1,2**, TANG Ya-Chao1,2,3, PENG Zhao-Yang1,2, DENG Xiao-Chuan3, BAI Yun1,2, WANG Yi-Yu4, LI Cheng-Zhan4, LIU Ke-An4, LIU Xin-Yu1,2 |
1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
3State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
4Zhuzhou CSR Times Electric Co., LTD, Zhuzhou 412001
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| Cite this article: |
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SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang et al 2015 Chin. Phys. Lett. 32 127101 |
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Abstract The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17 μm in thickness with 5×1015 cm?3 n-type doping, and the channel length is 1 μm. The MOSFETs show a peak mobility of 17 cm2/V?s and a typical threshold voltage of 3 V. The active area of 0.028 cm2 delivers a forward drain current of 7 A at VGS=22 V and VDS=15 V. The specific on-resistance (Ron,sp) is 18 mΩ?cm2 at VGS=22 V and the blocking voltage is 1975 V (IDS<100 nA) at VGS=0 V.
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Received: 25 May 2015
Published: 05 January 2016
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| PACS: |
71.20.Nr
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(Semiconductor compounds)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.Le
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(Other inorganic semiconductors)
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