| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors |
| SUN Jing, WANG Hong**, WANG Zhan, WU Shi-Wei, MA Xiao-Hua** |
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071
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| Cite this article: |
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SUN Jing, WANG Hong, WANG Zhan et al 2015 Chin. Phys. Lett. 32 107304 |
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Abstract The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors (OTFTs) is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length (source and drain electrodes' length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm. With the help of the contact length related contact resistance, contact-size-dependent fT of bottom-contact OTFTs is studied and it is found that fT increases with the decrease of the contact length in bottom-contact OTFTs.
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Received: 28 April 2015
Published: 30 October 2015
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| PACS: |
73.40.Cg
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(Contact resistance, contact potential)
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73.61.Ph
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(Polymers; organic compounds)
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85.30.Tv
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(Field effect devices)
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