| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process |
| XU Gao-Bo**, XU Qiu-Xia, YIN Hua-Xiang, ZHOU Hua-Jie, YANG Tao, NIU Jie-Bin, HE Xiao-Bin, MENG Ling-Kuan, YU Jia-Han, LI Jun-Feng, YAN Jiang, ZHAO Chao, CHEN Da-Peng |
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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| Cite this article: |
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XU Gao-Bo, XU Qiu-Xia, YIN Hua-Xiang et al 2013 Chin. Phys. Lett. 30 087303 |
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Abstract We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO2/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-k/metal-gate stack formation after the 1000°C source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device's saturation driving current is 2.71×10?4 A/μm (VGS=VDS=?1.5 V) and the off-state current is 2.78×10?9 A/μm. The subthreshold slope of 105 mV/dec (VDS=?1.5 V), drain induced barrier lowering of 80 mV/V and Vth of ?0.3 V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.
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Received: 20 May 2013
Published: 21 November 2013
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.-r
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(Electrical properties of specific thin films)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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