| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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An Improvement of the Thermal Stability of SnTe through Nitrogen Doping |
| XIA Meng-Jiao1,2, RAO Feng1**, SONG Zhi-Tang1, REN Kun1,2, WU Liang-Cai1, LIU Bo1, FENG Song-Lin1 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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XIA Meng-Jiao, RAO Feng, SONG Zhi-Tang et al 2013 Chin. Phys. Lett. 30 037401 |
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Abstract Nitrogen doping is applied to improve the thermal stability of SnTe. The crystallization temperature Tc of SnTe is below room temperature, which can be elevated to 216°C by 7.65at.% nitrogen doping. Nitrogen doping results in the formation of SnNx in the nitrogen doped SnTe (N-SnTe) materials, which hinders the movement of atoms and suppresses the crystallization, leading to a better thermal stability. The crystallization activation energy (Ea) and data retention for ten years of 7.65at.% N-SnTe are 1.89 eV and 81°C, respectively. Moreover, the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.6 V. The good thermal stability and reversible phase-change ability have proved the potential of N-SnTe for phase-change memory application.
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Received: 12 November 2012
Published: 29 March 2013
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| PACS: |
74.62.-c
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(Transition temperature variations, phase diagrams)
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81.05.-t
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(Specific materials: fabrication, treatment, testing, and analysis)
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85.05.Zx
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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