| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p–i–n Photodetectors |
| WANG Guo-Sheng, LU Hai**, XIE Feng, CHEN Dun-Jun, REN Fang-Fang, ZHANG Rong, ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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WANG Guo-Sheng, LU Hai, XIE Feng et al 2012 Chin. Phys. Lett. 29 097302 |
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Abstract AlGaN-based back-illuminated solar-blind ultraviolet (UV) p–i–n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelength-selective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of ～113.5 mA/W at 270 nm, which corresponds to an external quantum efficiency of ～52%. Under a reverse bias of ?5 V, the PD shows a low dark current of ～1.8 pA and an enhanced peak quantum efficiency of ～64%. The thermal noise limited detectivity is estimated to be ～3.3×1013 cm?Hz1/2W?1.
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Received: 15 June 2012
Published: 01 October 2012
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.05.Ea
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(III-V semiconductors)
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