| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Experimental Research on Carrier Redistribution in InAs/GaAs Quantum Dots |
| LI Chuan-Feng1**, CHEN Geng1, GONG Ming1, LI Hai-Qiao2, NIU Zhi-Chuan2 |
1Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026
2State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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LI Chuan-Feng, CHEN Geng, GONG Ming et al 2012 Chin. Phys. Lett. 29 097201 |
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Abstract In order to investigate the carrier redistribution mechanisms in InAs/GaAs self-assembled quantum dots, the photoluminescent energy peak shift is studied with increasing excitation power. Unusually for samples of relatively low density, it is shown that the energy peak position could recover slowly after a fast redshift, associated with the increasing excitation power. A theoretical model is presented, which involves the Auger effect assisting carrier recapture as important mechanisms during the relaxation process.
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Received: 15 May 2012
Published: 01 October 2012
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