| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors |
| MA Peng1,JIN Zhi1**,GUO Jian-Nan1,PAN Hong-Liang1,LIU Xin-Yu1,YE Tian-Chun1,WANG Hong2,WANG Guan-Zhong2 |
1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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MA Peng, JIN Zhi, GUO Jian-Nan et al 2012 Chin. Phys. Lett. 29 057302 |
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Abstract We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO2/Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2O3 are used as the gate dielectrics. The observation of n− and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2/V⋅s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 µm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications.
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Received: 12 October 2011
Published: 30 April 2012
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.22.Pr
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(Electronic structure of graphene)
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77.55.D-
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[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2] Geim A K and Novoselov K S 2007 Nature Mater. 6 183
[3] Meric I, Han M Y, Young A F, Ozyilmaz B, Kim P and Shepard K L 2008 Nature Nanotechnol. 3 654
[4] Liao L, Lin Y C, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang K L, Huang Y and Duan X 2010 Nature 467 305
[5] Lin Y M, Dimitrakopoulos C, Jenkins K A, Farmer D B, Chiu H Y, Grill A and Avouris P 2010 Science 327 662
[6] Wu Y, Lin Y M, Bol A A, Jenkins K A, Xia F, Farmer D B, Zhu Y and Avouris P 2011 Nature 472 74
[7] Lin Y M, Valdes-Garcia A, Han S J, Farmer D B, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P and Jenkins K A 2011 Science 332 1294
[8] Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L and Ruoff R S 2009 Science 324 1312
[9] Sun Z, Yan Z, Yao J, Beitler E, Zhu Y and Tour J M 2010 Nature 468 549
[10] Jin Z, Su Y, Chen J, Liu X and Wu D 2009 Appl. Phys. Lett. 95 233110
[11] Ma P, Jin Z, Guo J, Pan H, Liu X and Ye T 2010 Appl. Phys. Lett. (submitted)
[12] Lin Y M, Jenkins K A, Valdes-Garcia A, Small J P, Farmer D B and Avouris P 2009 Nano Lett. 9 422
[13] Farmer D B, Chiu H Y, Lin Y M, Jenkins K A, Xia F and AVouris P 2009 Nano Lett. 9 4474
[14] Kim S, Nah, J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E and Banerjee S K 2009 Appl. Phys. Lett. 94 062107
[15] Farmer D B, Golizadeh-Mojarad R, Perebeinos V, Lin Y M, Tulevski G S, Tsang J C and Avouris P 2009 Nano Lett. 9 388
[16] Huard B, Stander N, Sulpizio J A and Goldhaber-Gordon D 2008 Phys. Rev. B 78 121402(R)
[17] Parrish K N and Akinwande D 2011 Appl. Phys. Lett. 98 183505
[18] Farmer D B, Lin Y M and Avouris P 2010 Appl. Phys. Lett. 97 013103
[19] Huang B C, Zhang M, Wang Y and Woo J 2011 Appl. Phys. Lett. 99 032107
[20] Robinson J A, LaBella M, Zhu M, Hollander M, Kasarda R, Hughes Z, Trumbull K, Cavalero R and Snyder D 2011 Appl. Phys. Lett. 98 053103 |
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