| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector |
| ZHANG Chao1,2,3**, SONG Zhi-Tang1, WU Guan-Ping2, LIU Bo1**, WANG Lian-Hong2, XU Jia2, LIU Yan1, WANG Lei2, YANG Zuo-Ya2, FENG Song-Lin1 |
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203
3Graduate University of the Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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ZHANG Chao, YANG Zuo-Ya, XU Jia et al 2012 Chin. Phys. Lett. 29 038104 |
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Abstract An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 µm CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si−diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond. A cross-point memory selector with a large on/off current ratio is demonstrated, the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state. A low SET programming current of 0.7 mA is achieved and RESET/SET resistance difference of 10000× is obtained.
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| Keywords:
81.05.Cy
73.61.Ey
73.40.Qv
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Received: 16 December 2011
Published: 11 March 2012
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| PACS: |
81.05.Cy
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(Elemental semiconductors)
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73.61.Ey
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(III-V semiconductors)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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[1] Geppert L 2003 IEEE Spectrum 40 48
[2] Stefania B, Alessandro C and Guido T 2009 Appl. Phys. Lett. 94 092112
[3] Li J M, Shi L P, Yang H X, Lim L G, Miao X S and Lee H K 2006 Non Volatile Memory Technology Symposium 2006 (NVMTS 2006) 7th Annual p 71
[4] Bedeschi F, Bez R, Boffino C, Bonizzoni E, Buda E and Casagrande G 2005 IEEE J. Solid State Circuits 40 1557
[5] Sandre D G, Bettini L, Pirola A, Marmonier L, Pasotti M and Borghi M 2010 IEEE Int. Solid State Circuits Conference Digest of Technical Papers (ISSCC) p 268
[6] ITSR 2008 http://www.itrs.net/Links/2008ITRS/home2008.htm
[7] Ferdinando B, Fackenthal R, Resta C, Michele E, Jagasivamani M, Cassiodoro B, and Pellizzer F 2009 IEEE J. Solid State Circuits. 44 217
[8] Lee K J, Cho B H, Cho W Y and Kang S B 2008 IEEE J. Solid state Circuits 41 150
[9] Kang D H, Lee J H, Kong J H, Ha D, Yu J, Um C Y, Park J H, Yeung F, Kim J H, Park W I, Jeon Y J and Lee M K 2008 Symposium on VLSI Technology Digest of Technical Papers 98
[10] Zhang C, Song Z T, Wu G P, Liu B, Wan X D, Wang L, Wang L H, Yang Z Y, Chen B and Feng S L 2011 IEEE Electron Device Lett. 32 1014
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